PART |
Description |
Maker |
RF137 |
Transceiver For GSM Applications
|
Conexant
|
CX74017 |
RF Transceiver for GSM/GPRS Applications From old datasheet system
|
Conexant
|
UAA3536 |
Low-power GSM/GPRS/EDGE
triple-band Near-Zero IF transceiver
|
PHILIPS
|
MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
|
Motorola
|
CX74017 74017 |
On the Direct Conversion Receiver RF Transceiver for Multi-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions Inc.
|
MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc. MOTOROLA[Motorola Inc] Freescale (Motorola)
|
MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http:// MOTOROLA[Motorola, Inc]
|
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
SKY77325 |
iPAC PAM for Quad-Band GSM / GPRS iPACPAM for Quad-Band GSM / GPRS IPAC⒙ PAM FOR QUAD-BAND GSM / GPRS
|
Skyworks Solutions Inc.
|
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|